气候变化领域集成服务门户(CCPortal): O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate

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DOI	10.3390/app9030385
	O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate
	Feng, Qi; Wei, Wenqi; Zhang, Bin; Wang, Hailing; Wang, Jianhuan; Cong, Hui; Wang, Ting; Zhang, Jianjun
发表日期	2019
EISSN	2076-3417
卷号	9 期号:3
英文摘要	Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocations, antiphase boundaries and thermal cracks, which limit the device performance and lifetime. This paper reviews some of the recent developments on hybrid InAs/GaAs QD growth on Ge substrates and highly uniform (111)-faceted hollow Si (001) substrates by molecular beam epitaxy (MBE). By implementing step-graded epitaxial growth techniques, the emission wavelength can be tuned into either an O band or C/L band. Furthermore, microcavity QD laser devices are fabricated and characterized. The epitaxially grown III-V/IV hybrid platform paves the way to provide a promising approach for future on-chip silicon photonic integration.
关键词	III-V quantum dot silicon photonics epitaxial growth
学科领域	Chemistry; Materials Science; Physics
语种	英语
WOS研究方向	Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary ; Physics, Applied
来源期刊	APPLIED SCIENCES-BASEL
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/112093
作者单位	Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Feng, Qi,Wei, Wenqi,Zhang, Bin,et al. O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate[J]. 中国科学院西北生态环境资源研究院,2019,9(3).
APA	Feng, Qi.,Wei, Wenqi.,Zhang, Bin.,Wang, Hailing.,Wang, Jianhuan.,...&Zhang, Jianjun.(2019).O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate.APPLIED SCIENCES-BASEL,9(3).
MLA	Feng, Qi,et al."O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate".APPLIED SCIENCES-BASEL 9.3(2019).