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DOI	10.1364/OE.27.019348
	1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy
	Zhang, Bin; Wei, Wen-Qi; Wang, Jian-Huan; Zhang, Jie-Yin; Cong, Hui; Feng, Qi; Wang, Ting; Zhang, Jian-Jun
发表日期	2019
ISSN	1094-4087
卷号	27 期号:14
英文摘要	Direct epitaxial growth of O-band InAs/GaAs quantum-dot laser on Si substrates has been rapidly developing over the past few years. But most of current methodologies are not fully compatible with silicon-on-insulator (SOI) technology, which is the essential platform for silicon photonic devices. By implementing an in situ III-V/Si hybrid growth technique with (111)-faceted Si hollow structures, we demonstrate the first optically pumped InAs/GaAs quantum-dot microdisk laser on SOI substrates grown by molecular beam epitaxy (MBE). The microdisk laser on SOI is characterized with threshold pump power as low as 0.39 mW and a Q factor of 3900 at room temperature. Additionally, the compared device performance of InAs quantum-dot microdisk lasers on GaAs, Si (001) and SOI are simultaneously studied with identical epi-structures. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
学科领域	Optics
语种	英语
WOS研究方向	Optics
来源期刊	OPTICS EXPRESS
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/112076
作者单位	Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Bin,Wei, Wen-Qi,Wang, Jian-Huan,et al. 1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy[J]. 中国科学院西北生态环境资源研究院,2019,27(14).
APA	Zhang, Bin.,Wei, Wen-Qi.,Wang, Jian-Huan.,Zhang, Jie-Yin.,Cong, Hui.,...&Zhang, Jian-Jun.(2019).1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy.OPTICS EXPRESS,27(14).
MLA	Zhang, Bin,et al."1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy".OPTICS EXPRESS 27.14(2019).