气候变化领域集成服务门户(CCPortal): Catalyst-free growth of lateral InAs nanowires

CCPortal

DOI	10.1016/j.jcrysgro.2018.06.025
	Catalyst-free growth of lateral InAs nanowires
	Wang, Hailing; Wei, Wenqi; Wang, Jianhuan; Feng, Qi; Wu, Shiyao; Yang, Huaixin; Xu, Xiulai; Wang, Ting; Zhang, Jianjun
发表日期	2018
ISSN	0022-0248
EISSN	1873-5002
卷号	498
英文摘要	We demonstrate a catalyst-free method to grow lateral InAs nanowires on GaAs (1 0 0) substrate by means of molecular beam epitaxy. By applying pre-surface treatment under oxygen plasma, lateral InAs nanowires with lengths of 1-2 mu m and width of approximately 30-80 nm are epitaxial grown along [1 <(1)overbar> 0 ] direction. Stacking faults are not observed in the epitaxial process, which is usually an issue for InAs nanowires grown vertically on (1 1 1) substrates. Photo-luminescent measurements were performed for both single and multiple layers of InAs nanowires. A spectrum peak at the wavelength of 1625 nm is observed for a single wire at 5 K and room temperature emission is obtained for three layers of InAs nanowires. In addition, InAsSb nanowires are achieved along [1 1 0] direction, with a length of 0.4-0.8 mu m and a width of 60-80 nm.
关键词	Nanowires Molecular beam epitaxy Nanomaterials Semiconducting III-V materials
学科领域	Crystallography; Materials Science; Physics
语种	英语
WOS研究方向	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
来源期刊	JOURNAL OF CRYSTAL GROWTH
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111987
作者单位	Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Wang, Hailing,Wei, Wenqi,Wang, Jianhuan,et al. Catalyst-free growth of lateral InAs nanowires[J]. 中国科学院西北生态环境资源研究院,2018,498.
APA	Wang, Hailing.,Wei, Wenqi.,Wang, Jianhuan.,Feng, Qi.,Wu, Shiyao.,...&Zhang, Jianjun.(2018).Catalyst-free growth of lateral InAs nanowires.JOURNAL OF CRYSTAL GROWTH,498.
MLA	Wang, Hailing,et al."Catalyst-free growth of lateral InAs nanowires".JOURNAL OF CRYSTAL GROWTH 498(2018).