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DOI | 10.1088/1361-6528/aa749e |
Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures | |
Yan, Faguang; Zhao, Lixia; Patane, Amalia; Hu, PingAn; Wei, Xia; Luo, Wengang; Zhang, Dong; Lv, Quanshan; Feng, Qi; Shen, Chao; Chang, Kai; Eaves, Laurence; Wang, Kaiyou | |
发表日期 | 2017 |
ISSN | 0957-4484 |
EISSN | 1361-6528 |
卷号 | 28期号:27 |
英文摘要 | The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast (similar to 2 mu s), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies. |
关键词 | multicolorgallium selenideindium selenidevan der Waals heterostructurebuilt-in potential |
学科领域 | Science & Technology - Other Topics; Materials Science; Physics |
语种 | 英语 |
WOS研究方向 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
来源期刊 | NANOTECHNOLOGY |
来源机构 | 中国科学院西北生态环境资源研究院 |
文献类型 | 期刊论文 |
条目标识符 | http://gcip.llas.ac.cn/handle/2XKMVOVA/111922 |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Yan, Faguang,Zhao, Lixia,Patane, Amalia,et al. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures[J]. 中国科学院西北生态环境资源研究院,2017,28(27). |
APA | Yan, Faguang.,Zhao, Lixia.,Patane, Amalia.,Hu, PingAn.,Wei, Xia.,...&Wang, Kaiyou.(2017).Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.NANOTECHNOLOGY,28(27). |
MLA | Yan, Faguang,et al."Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures".NANOTECHNOLOGY 28.27(2017). |
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