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DOI	10.1063/1.4972795
	Large magnetoresistance effect in nitrogen-doped silicon
	Wang, Tao; Yang, Zhaolong; Wang, Wei; Si, Mingsu; Yang, Dezheng; Liu, Huiping; Xue, Desheng
发表日期	2017
ISSN	2158-3226
卷号	7 期号:5
英文摘要	In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications. (C) 2016 Author(s).
学科领域	Science & Technology - Other Topics; Materials Science; Physics
语种	英语
WOS研究方向	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
来源期刊	AIP ADVANCES
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111901
作者单位	Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou, Peoples R China
推荐引用方式 GB/T 7714	Wang, Tao,Yang, Zhaolong,Wang, Wei,et al. Large magnetoresistance effect in nitrogen-doped silicon[J]. 中国科学院西北生态环境资源研究院,2017,7(5).
APA	Wang, Tao.,Yang, Zhaolong.,Wang, Wei.,Si, Mingsu.,Yang, Dezheng.,...&Xue, Desheng.(2017).Large magnetoresistance effect in nitrogen-doped silicon.AIP ADVANCES,7(5).
MLA	Wang, Tao,et al."Large magnetoresistance effect in nitrogen-doped silicon".AIP ADVANCES 7.5(2017).