气候变化领域集成服务门户(CCPortal): Charge trap memory based on few-layer black phosphorus

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DOI	10.1039/c5nr08065g
	Charge trap memory based on few-layer black phosphorus
	Feng, Qi; Yan, Faguang; Luo, Wengang; Wang, Kaiyou
发表日期	2016
ISSN	2040-3364
EISSN	2040-3372
卷号	8 期号:5
英文摘要	Atomically thin layered two-dimensional materials, including transition-metal dichalcogenide (TMDC) and black phosphorus (BP), have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices. Here, for the first time we show nonvolatile charge-trap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of the high-k HfO2. The device shows a high endurance of over 120 cycles and a stable retention of similar to 30% charge loss after 10 years, even lower than the reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.
学科领域	Chemistry; Science & Technology - Other Topics; Materials Science; Physics
语种	英语
WOS研究方向	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
来源期刊	NANOSCALE
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111889
作者单位	Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Feng, Qi,Yan, Faguang,Luo, Wengang,et al. Charge trap memory based on few-layer black phosphorus[J]. 中国科学院西北生态环境资源研究院,2016,8(5).
APA	Feng, Qi,Yan, Faguang,Luo, Wengang,&Wang, Kaiyou.(2016).Charge trap memory based on few-layer black phosphorus.NANOSCALE,8(5).
MLA	Feng, Qi,et al."Charge trap memory based on few-layer black phosphorus".NANOSCALE 8.5(2016).