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DOI	10.1209/0295-5075/103/67007
	Grain boundary ferromagnetism in vanadium-doped In2O3 thin films
	Feng, Qi; Blythe, Harry J.; Fox, A. Mark; Qin, Xiu-Fang; Xu, Xiao-Hong; Heald, Steve M.; Gehring, Gillian A.
发表日期	2013
ISSN	0295-5075
EISSN	1286-4854
卷号	103 期号:6
英文摘要	Room temperature ferromagnetism was observed in In2O3 thin films doped with 5 at.% V, prepared by pulsed-laser deposition at substrate temperatures ranging from 300 to 600 degrees C. X-ray absorption fine-structure measurement indicated that V was substitutionally dissolved in the In2O3 host lattice, thus excluding the existence of secondary phases of V compounds. Magnetic measurements based on SQUID magnetometry and magnetic circular dichroism confirm that the magnetism is at grain boundaries and also in the grains. The overall magnetization originates from the competing effects between grains and grain boundaries. Copyright (C) EPLA, 2013
学科领域	Physics
语种	英语
WOS研究方向	Physics, Multidisciplinary
来源期刊	EPL
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111700
作者单位	Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
推荐引用方式 GB/T 7714	Feng, Qi,Blythe, Harry J.,Fox, A. Mark,et al. Grain boundary ferromagnetism in vanadium-doped In2O3 thin films[J]. 中国科学院西北生态环境资源研究院,2013,103(6).
APA	Feng, Qi.,Blythe, Harry J..,Fox, A. Mark.,Qin, Xiu-Fang.,Xu, Xiao-Hong.,...&Gehring, Gillian A..(2013).Grain boundary ferromagnetism in vanadium-doped In2O3 thin films.EPL,103(6).
MLA	Feng, Qi,et al."Grain boundary ferromagnetism in vanadium-doped In2O3 thin films".EPL 103.6(2013).