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	SPICE MODEL FOR LDD STRUCTURE CMOS DEVICE AT 35K
	Liu Wen-Yong; Ding Rui-Jun; Feng Qi
发表日期	2008
ISSN	1001-9014
卷号	27 期号:6
英文摘要	Since the abnormal series resistance caused by LDD structure for CMOS device at 35K temperature could not be simulated by BSIM3v3 model, new macro models were introduced to represent the change of LDD series resistance. Simulation results exhibit that the I-V characteristics of the macro model match well with the measurement. Finally, the CMOs transmission gate and two-stage amplifier were simulated with new BSIM3v3 Model ill addition to the macro model. The results reveal that the change of LDD series resistance has obvious effects on low temperature CMOS circuits.
关键词	lightly doped drain(LDD)series resistance BSIM3v3 SPICE model CMOS low temperature
学科领域	Optics
语种	英语
WOS研究方向	Optics
来源期刊	JOURNAL OF INFRARED AND MILLIMETER WAVES
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111528
作者单位	Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
推荐引用方式 GB/T 7714	Liu Wen-Yong,Ding Rui-Jun,Feng Qi. SPICE MODEL FOR LDD STRUCTURE CMOS DEVICE AT 35K[J]. 中国科学院西北生态环境资源研究院,2008,27(6).
APA	Liu Wen-Yong,Ding Rui-Jun,&Feng Qi.(2008).SPICE MODEL FOR LDD STRUCTURE CMOS DEVICE AT 35K.JOURNAL OF INFRARED AND MILLIMETER WAVES,27(6).
MLA	Liu Wen-Yong,et al."SPICE MODEL FOR LDD STRUCTURE CMOS DEVICE AT 35K".JOURNAL OF INFRARED AND MILLIMETER WAVES 27.6(2008).